Resurrection
25.04.11, 08:24
Embedded Memory Solutions Memory Products - Toshiba America Electronic Components, Inc. (http://www.toshiba.com/taec/Catalog/Family.do?familyid=7&subfamilyid=900116)
Flash memory specialist SanDisk and its manufacturing partner Toshiba have jointly announced the production of NAND flash chips based on a 19nm production process - a step ahead of the rest of the market.
-------------
http://www.sb-innovation.de/attachment.php?attachmentid=10558
Due to its high reliability, low power requirements and cost/performance advantages, MLC NAND flash memory is the preferred data storage solution for portable electronic devices. Designers are increasingly turning to embedded NAND solutions for high-capacity on-board storage as an alternative to lower density miniature hard disk drives.
To support the needs of current and emerging applications, Toshiba has developed several embedded memory solutions. Each single-package solution includes high-density MLC NAND and a controller with a NAND, or a high-speed MMC interface. By combining high-density MLC NAND and the controller function in the same package, host software drivers and memory management functions are minimized. These features, along with a standard interface, simplify the design and provide the cost/performance benefits of MLC NAND.
e-MMC™ NAND
Ranging from 2GB to 128GB in capacity, Toshiba's e-MMC embedded MLC solutions integrate a dedicated controller and are fully compliant with the MultiMedia Card Association (MMCA) Ver. 4.3 or Ver. 4.4 high speed memory standard for memory cards. The products support standard interfacing and an embedded controller manages functions such as error correction code (ECC), wear-leveling, and block management, simplifying integration into system designs
Key Features
-Integrated MMCA Ver. 4.3 or Ver. 4.4 controller handles essential functions, including block management, error correction (ECC) and driver software.
-Simplifies system development, minimizes development costs and improves time to market for new and upgraded products.
-Product line-up supports capacities from 2GB to 128GB.
-Chips fabricated with leading-edge 32nm process technology.
---------
Recently Intel and Micron introduced a new 8GB flash product that makes use of a new 20-nanometer process instead of the older 25-nanometer system.
Intel, Micron debut 8GB flash memory using 20-nanometer process (http://www.mobileburn.com/news.jsp?Id=14238)
But now SanDisk and Toshiba have gone one better - literally - with the world's first commercially viable 19nm production process for the solid-state storage components.
It will allow for the creation of 128GB devices using 16 chips for use in smartphones, tablets and removable storage devices with the high capacities and small form factors. Toggle DDR 2.0 has been introduced for faster data transfer.
Flash memory specialist SanDisk and its manufacturing partner Toshiba have jointly announced the production of NAND flash chips based on a 19nm production process - a step ahead of the rest of the market.
-------------
http://www.sb-innovation.de/attachment.php?attachmentid=10558
Due to its high reliability, low power requirements and cost/performance advantages, MLC NAND flash memory is the preferred data storage solution for portable electronic devices. Designers are increasingly turning to embedded NAND solutions for high-capacity on-board storage as an alternative to lower density miniature hard disk drives.
To support the needs of current and emerging applications, Toshiba has developed several embedded memory solutions. Each single-package solution includes high-density MLC NAND and a controller with a NAND, or a high-speed MMC interface. By combining high-density MLC NAND and the controller function in the same package, host software drivers and memory management functions are minimized. These features, along with a standard interface, simplify the design and provide the cost/performance benefits of MLC NAND.
e-MMC™ NAND
Ranging from 2GB to 128GB in capacity, Toshiba's e-MMC embedded MLC solutions integrate a dedicated controller and are fully compliant with the MultiMedia Card Association (MMCA) Ver. 4.3 or Ver. 4.4 high speed memory standard for memory cards. The products support standard interfacing and an embedded controller manages functions such as error correction code (ECC), wear-leveling, and block management, simplifying integration into system designs
Key Features
-Integrated MMCA Ver. 4.3 or Ver. 4.4 controller handles essential functions, including block management, error correction (ECC) and driver software.
-Simplifies system development, minimizes development costs and improves time to market for new and upgraded products.
-Product line-up supports capacities from 2GB to 128GB.
-Chips fabricated with leading-edge 32nm process technology.
---------
Recently Intel and Micron introduced a new 8GB flash product that makes use of a new 20-nanometer process instead of the older 25-nanometer system.
Intel, Micron debut 8GB flash memory using 20-nanometer process (http://www.mobileburn.com/news.jsp?Id=14238)
But now SanDisk and Toshiba have gone one better - literally - with the world's first commercially viable 19nm production process for the solid-state storage components.
It will allow for the creation of 128GB devices using 16 chips for use in smartphones, tablets and removable storage devices with the high capacities and small form factors. Toggle DDR 2.0 has been introduced for faster data transfer.